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| (R) BAS70J / BAS70W BAS70-04W /BAS70-05W / BAS70-06W SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS n NC K NC A K1 A K A K2 K2 n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE A K1 BAS70W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages. Single and double diodes with different pining are available. K A2 A1 A1 K A2 A2 K1 BAS70-06W K2 A2 K1 K2 A1 A1 BAS70-05W SOT-323 BAS70-04W A 76 K BAS70J SOD-323 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Tamb = 25C Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp = 10 ms SOD-323 SOT-323 - 65 to +150 150 260 C C C Parameter Repetitive peak reverse voltage Value 70 70 1 230 Unit V mA A mW Note 1: for double diodes, Ptot is the total dissipation of both diodes. *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j - a ) 1/5 May 2000 - Ed: 4B BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient (*) Parameters SOD-323 SOT-323 (*) Mounted on epoxy board, with recommended pad layout. Value 550 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VBR VF * IR ** Pulse test: Test Conditions Tj = 25C Tj = 25C Tj = 25C * tp = 380s, < 2% ** tp = 5 ms, < 2% Min. 70 Typ. Max. Unit V IR = 10A IF = 1mA VR = 50V 410 100 mV nA DYNAMIC CHARACTERISTICS Symbol C * Tj = 25C F = 1MHz Test Conditions VR = 0V Min. Typ. Max. 2 100 Unit pF ps Tj = 25C IF = 5mA Krakauer Method * Effective carrier life time. 2/5 BAS70-05W / BAS70-06W Fig. 1: Forward voltage drop versus forward current. IFM(A) 7E-2 Tj=100C Typical values BAS70J / BAS70W / BAS70-04W / Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+1 Tj=100C 1E-2 Tj=25C Maximum values 1E+0 1E-1 Tj=25C 1E-3 Tj=25C Typical values 1E-2 VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Fig. 3: Reverse leakage current versus junction temperature (typical values). IR(A) 5E+2 VR=70V Fig. 4: Junction capacitance versus reverse voltage applied (typical values). C(pF) 2.0 1.0 F=1MHz Tj=25C 1E+2 1E+1 1E+0 1E-1 Tj(C) 1E-2 0 25 50 75 100 125 150 0.1 1 VR(V) 10 100 Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommended pad layout, S(Cu)=35m). Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 600 P=0.2W Zth(j-a)/Rth(j-a) 1.00 = 0.5 550 500 450 T = 0.2 0.10 = 0.1 400 350 tp Single pulse tp(s) 1E-1 1E+0 =tp/T S(Cu) (mm ) 300 0 5 10 15 20 25 30 35 40 45 50 0.01 1E-3 1E-2 1E+1 1E+2 3/5 BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W PACKAGE MECHANICAL DATA SOT-323 DIMENSIONS A REF. A1 D Millimeters Min. Typ. Max. Min. 1.1 0.1 0.4 2.0 1.25 0.65 1.8 0.1 0 2.1 0.2 2.4 0.3 30 2.2 0.031 0.0 0.010 0.8 0.0 0.25 0.1 1.8 1.15 Inches Typ. Max. 0.043 0.004 0.016 0.010 A A1 b c b 0.26 0.004 D E e H E 0.071 0.079 0.086 0.026 0.071 0.083 0.094 0.004 0.008 0.012 0 30 L 1.35 0.045 0.049 0.053 H c L e 4/5 BAS70-05W / BAS70-06W PACKAGE MECHANICAL DATA SOD-323 BAS70J / BAS70W / BAS70-04W / H b E A1 DIMENSIONS REF. A A1 0 0.25 0.1 1.52 1.11 2.3 0.1 0.1 b c D Millimeters Min. Max. 1.17 0.1 0.44 0.25 1.8 1.45 2.7 0.46 0.41 0 0.01 0.004 0.06 0.044 0.09 0.004 0.004 Inches Min. Max. 0.046 0.004 0.017 0.01 0.071 0.057 0.106 0.02 0.016 D A c Q1 E H L Q1 L Ordering type BAS70W BAS70-04W BAS70-05W BAS70-06W BAS70J n Marking D28 D31 D30 D29 76 Package SOT-323 SOT-323 SOT-323 SOT-323 SOD-323 Weight 0.006g 0.006g 0.006g 0.006g 0.005g Base qty 3000 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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